 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BUZ 271 SIPMOS (R) Power Transistor * P channel * Enhancement mode * Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 271 VDS -50 V ID -22 A RDS(on) 0.15 Package TO-220 AB Ordering Code C67078-S1453-A2 Maximum Ratings Parameter Continuous drain current Symbol Values -22 Unit A ID IDpuls -88 TC = 26 C Pulsed drain current TC = 25 C Avalanche energy, single pulse EAS 200 mJ ID = -22 A, VDD = -25 V, RGS = 25 L = 413 H, Tj = 25 C Gate source voltage Power dissipation VGS Ptot 20 125 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 1 75 E 55 / 150 / 56 C K/W Semiconductor Group 1 07/96 BUZ 271 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -50 -3 -0.1 -10 -10 0.12 -4 V VGS = 0 V, ID = -0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) -2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS -1 -100 A VDS = -50 V, VGS = 0 V, Tj = 25 C VDS = -50 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS -100 nA 0.15 VGS = -20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = -10 V, ID = -14 A Semiconductor Group 2 07/96 BUZ 271 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 1.5 4 2000 650 250 - S pF 2700 975 375 ns 30 45 VDS 2 * ID * RDS(on)max, ID = -14 A Input capacitance Ciss Coss - VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time td(on) VDD = -30 V, VGS = -10 V, ID = -2.95 A RGS = 50 Rise time tr 120 180 VDD = -30 V, VGS = -10 V, ID = -2.95 A RGS = 50 Turn-off delay time td(off) 130 175 VDD = -30 V, VGS = -10 V, ID = -2.95 A RGS = 50 Fall time tf 140 190 VDD = -30 V, VGS = -10 V, ID = -2.95 A RGS = 50 Semiconductor Group 3 07/96 BUZ 271 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A -1.25 90 0.23 -22 -88 V -1.7 ns C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = -44 A Reverse recovery time VR = -30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = -30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 271 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS -10 V -24 A -20 130 W 110 Ptot 100 90 80 ID -18 -16 -14 70 -12 60 50 40 30 20 10 0 0 20 40 60 80 100 120 C 160 -10 -8 -6 -4 -2 0 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C -10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W A ID -10 2 t = 35.0s p 100 s ZthJC 10 0 /ID = -10 1 VD S 1 ms 10 -1 D = 0.50 0.20 0.10 ) on S( RD 10 ms 10 -2 0.05 0.02 0.01 DC single pulse -10 0 -10 0 -10 1 V -10 2 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 271 Typ. output characteristics ID = (VDS) parameter: tp = 80 s -50 A Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.45 abc d e f g h i Ptot = 125W l VGS [V] a b -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 -10.0 -20.0 ID -40 -35 -30 -25 -20 -15 i k RDS (on)0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 VGS [V] = a b c d e f -4.5 -4.0 -5.5 -6.0 -6.5 -7.0 -7.5 -5.0 g h i j -8.0 -9.0 -10.0 -20.0 c d e f g h i jj k l -10 -5 0 0 h g f e d c b a j -2 -4 -6 -8 V -12 -4 -8 -12 -16 A -24 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max -24 A -20 parameter: tp = 80 s, VDS2 x ID x RDS(on)max 6.0 S 5.0 ID -18 -16 -14 -12 -10 -8 -6 -4 -2 0 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 gfs 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 -4 -8 -12 -16 A ID -22 VGS Semiconductor Group 6 07/96 BUZ 271 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = -14 A, VGS = -10 V 0.36 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA -4.6 V -4.0 RDS (on) 0.28 0.24 0.20 0.16 0.12 0.08 98% VGS(th) -3.6 -3.2 -2.8 typ 98% typ -2.4 -2.0 -1.6 -1.2 -0.8 2% 0.04 0.00 -60 -0.4 -20 20 60 100 C 160 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s -10 2 nF C 10 0 A Ciss IF -10 1 Coss Crss 10 -1 -10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 -10 -1 0.0 -5 -10 -15 -20 -25 -30 V VDS -40 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Semiconductor Group 7 07/96 BUZ 271 Avalanche energy EAS = (Tj ) parameter: ID = -22 A, VDD = -25 V RGS = 25 , L = 413 H 220 mJ Drain-source breakdown voltage V(BR)DSS = (Tj) -60 V EAS 180 160 140 120 100 80 60 40 20 0 20 40 60 80 100 120 C 160 V(BR)DSS-57 -56 -55 -54 -53 -52 -51 -50 -49 -48 -47 -46 -45 -60 -20 20 60 100 C 160 Tj Tj Semiconductor Group 8 07/96 BUZ 271 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96 |
Price & Availability of BUZ271
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |